1 tga4022 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com -50 -40 -30 -20 -10 0 10 20 30 16 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) s-parameter (db) key features ? frequency range: 18 - 23 ghz ? 26 db nominal gain ? 32.5 dbm nominal p1db ? 15db nominal return loss ? bias 7.0 v, 840 ma ? 0.25 um 2mi phemt technology ? chip dimensions 3.65 x 3.14 x 0.10 mm (0.144 x 0.124 x 0.004 in) primary applications ? point-to-point radio ? point-to-multipoint communications ? k-band sat-com measured fixtured data bias conditions: vd =7.0 v, id =840 ma gain orl irl 30 31 32 33 34 35 19.5 20 20.5 21 21.5 22 22.5 23 frequency (ghz) p1db (dbm) datasheet subject to change without notice. product description the triquint tga4022 is a compact high power amplifier mmic for k-band applications. the part is designed using triquint?s proven standard 0.25 um power phemt production process. the tga4022 nominally provides 32.5dbm of output power @ 1db gain compression from 18 - 23ghz. the mmic also provides 26db gain and 15db typical return loss. the part is ideally suited for markets such as point-to-point radio, point-to-multipoint communications, and k-band satellite communications both commercial and military. the tga4022 is 100% dc and rf tested on- wafer to ensure performance compliance. lead-free & rohs compliant. k band high power amplifier
2 tga4022 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1 / symbol parameter value notes vd drain voltage 8 v 2/ vg gate voltage range -1 to + 0 v id drain current 1.5 a 2 / 3 / ? ig ? gate current 56 ma 3 / p in input continuous wave power 26 dbm p d power dissipation 12 w 2 / 4 / t ch operating channel temperature 200 c 5 / 6 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / total current for the entire mmic. 4/ when operated at this bias condition with a base plate temperature of 70 c, the median life is 2.3e4 hrs. 5/ junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ these ratings apply to each individual fet. q1 is 600 um fet table ii dc probe tests (ta = 25 c, nominal) symbol parameter min. typ. max. units i dss,q1 saturated drain current 120 180 240 ma g m,q1 transconductance 162 240 318 ms v bvgs breakdown voltage gate_source -30 -15 -12 v v bvgd breakdown voltage gate_drain -30 -16 -12 v v p pinch-off voltage -1.35 -1 -0.65 v
3 tga4022 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii electrical characteristics (ta = 25 0 c nominal) parameter typical units frequency range 18 - 23 ghz drain voltage, vd 7.0 v drain current, id 840 ma small signal gain, s21 26 db input return loss, s11 15 db output return loss, s22 20 db pout @ 1db gain compression, p1db 32.5 dbm note: temperature coefficient on gain -0.036 db/ 0 c
4 tga4022 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv thermal information parameter test conditions t ch (c) jc (c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) vd = 7 v id = 1 a pdiss = 7 w 146 10.8 1.5 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 tga4022 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com preliminary measured data bias conditions: vd = 7.0 v, id = 840 ma, room temperature 6 8 10 12 14 16 18 20 22 24 26 28 16 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) gain (db) 30 31 32 33 34 35 19.5 20 20.5 21 21.5 22 22.5 23 fr e que nc y ( ghz ) p1db (dbm)
6 tga4022 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com preliminary measured data bias conditions: vd = 7.0 v, id = 840 ma, room temperature -40 -35 -30 -25 -20 -15 -10 -5 0 16 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) input return loss (db) -40 -35 -30 -25 -20 -15 -10 -5 0 16 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) output return loss (db)
7 tga4022 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 0 5 10 15 20 25 30 35 40 45 19 20 21 22 23 24 25 26 27 28 29 output power per tone (dbm) imd3 (dbc) 20ghz 21ghz 22ghz 23ghz preliminary measured data bias conditions: vd = 7.0 v, id = 840 ma, room temperature
8 tga4022 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 0 0 0.992 (0.040) 2.635 (0.104) 3.650 (0.144) 1.063 (0.042) 2.635 (0.104) 0.992 (0.040) 3.140 (0.124) 2.077 (0.082) 1 2 3 4 5 6 units: millimeters (inches) thickness: 0.100 (0.004) chip size to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) rf ground is backside of mmic bond pad #1: bond pad #2, #6: bond pad #3, #5: bond pad #4: (rf in) (vg) (vd) (rf out) 0.100 x 0.125 0.100 x 0.100 0.200 x 0.100 0.100 x 0.125 (0.004 x 0.005) (0.004 x 0.004) (0.008 x 0.004) (0.004 x 0.005) 0.129 (0.005) 3.011 (0.119) 3.522 (0.139) 0.129 (0.005) 0.128 (0.005)
9 tga4022 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com recommended chip assembly diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. .01uf 100pf rf in rf out .01uf 100pf 100pf .01uf .01uf 100pf vg vd vd vg 100uf 10 ohm 10 ohm 100uf 10 ohm 100uf 10 ohm 100uf
10 tga4022 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 0 c.
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